Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

Handle URI:
http://hdl.handle.net/10754/597634
Title:
Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
Authors:
Guo, Wei; Zhang, Meng; Bhattacharya, Pallab; Heo, Junseok
Abstract:
We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.
Citation:
Guo W, Zhang M, Bhattacharya P, Heo J (2011) Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics. Nano Lett 11: 1434–1438. Available: http://dx.doi.org/10.1021/nl103649d.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
N012509-00
Issue Date:
13-Apr-2011
DOI:
10.1021/nl103649d
PubMed ID:
21366223
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The work was supported by KAUST under Grant N012509-00.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorGuo, Weien
dc.contributor.authorZhang, Mengen
dc.contributor.authorBhattacharya, Pallaben
dc.contributor.authorHeo, Junseoken
dc.date.accessioned2016-02-25T12:43:26Zen
dc.date.available2016-02-25T12:43:26Zen
dc.date.issued2011-04-13en
dc.identifier.citationGuo W, Zhang M, Bhattacharya P, Heo J (2011) Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics. Nano Lett 11: 1434–1438. Available: http://dx.doi.org/10.1021/nl103649d.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid21366223en
dc.identifier.doi10.1021/nl103649den
dc.identifier.urihttp://hdl.handle.net/10754/597634en
dc.description.abstractWe have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.en
dc.description.sponsorshipThe work was supported by KAUST under Grant N012509-00.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectauger recombinationen
dc.subjectefficiency droopen
dc.subjectnanowiresen
dc.subjectNitride semiconductoren
dc.titleAuger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristicsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United Statesen
kaust.grant.numberN012509-00en

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