Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

Handle URI:
http://hdl.handle.net/10754/597497
Title:
Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
Authors:
Kong, Desheng; Chen, Yulin; Cha, Judy J.; Zhang, Qianfan; Analytis, James G.; Lai, Keji; Liu, Zhongkai; Hong, Seung Sae; Koski, Kristie J.; Mo, Sung-Kwan; Hussain, Zahid; Fisher, Ian R.; Shen, Zhi-Xun; Cui, Yi
Abstract:
Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.
Citation:
Kong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, et al. (2011) Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning. Nature Nanotechnology 6: 705–709. Available: http://dx.doi.org/10.1038/NNANO.2011.172.
Publisher:
Springer Nature
Journal:
Nature Nanotechnology
KAUST Grant Number:
KUS-l1-001-12; KUS-F1-033-02
Issue Date:
2-Oct-2011
DOI:
10.1038/NNANO.2011.172
PubMed ID:
21963714
Type:
Article
ISSN:
1748-3387; 1748-3395
Sponsors:
Y.C. acknowledges support from the Keck Foundation, a DARPA MESO project (no. N66001-11-1-4105) and a King Abdullah University of Science and Technology (KAUST) Investigator Award (no. KUS-l1-001-12). Y.L.C. acknowledges support from a DARPA MESO project (no. N66001-11-1-4105). Z.K.L., Z.X.S., Y.L.C., J.G.A. and I. R. F. acknowledge support from Department of Energy, Office of Basic Energy Science (contract DE-AC02-76SF00515). K. L. acknowledges support from the KAUST Postdoctoral Fellowship (no. KUS-F1-033-02).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorKong, Deshengen
dc.contributor.authorChen, Yulinen
dc.contributor.authorCha, Judy J.en
dc.contributor.authorZhang, Qianfanen
dc.contributor.authorAnalytis, James G.en
dc.contributor.authorLai, Kejien
dc.contributor.authorLiu, Zhongkaien
dc.contributor.authorHong, Seung Saeen
dc.contributor.authorKoski, Kristie J.en
dc.contributor.authorMo, Sung-Kwanen
dc.contributor.authorHussain, Zahiden
dc.contributor.authorFisher, Ian R.en
dc.contributor.authorShen, Zhi-Xunen
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-25T12:40:54Zen
dc.date.available2016-02-25T12:40:54Zen
dc.date.issued2011-10-02en
dc.identifier.citationKong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, et al. (2011) Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning. Nature Nanotechnology 6: 705–709. Available: http://dx.doi.org/10.1038/NNANO.2011.172.en
dc.identifier.issn1748-3387en
dc.identifier.issn1748-3395en
dc.identifier.pmid21963714en
dc.identifier.doi10.1038/NNANO.2011.172en
dc.identifier.urihttp://hdl.handle.net/10754/597497en
dc.description.abstractTopological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.en
dc.description.sponsorshipY.C. acknowledges support from the Keck Foundation, a DARPA MESO project (no. N66001-11-1-4105) and a King Abdullah University of Science and Technology (KAUST) Investigator Award (no. KUS-l1-001-12). Y.L.C. acknowledges support from a DARPA MESO project (no. N66001-11-1-4105). Z.K.L., Z.X.S., Y.L.C., J.G.A. and I. R. F. acknowledge support from Department of Energy, Office of Basic Energy Science (contract DE-AC02-76SF00515). K. L. acknowledges support from the KAUST Postdoctoral Fellowship (no. KUS-F1-033-02).en
dc.publisherSpringer Natureen
dc.titleAmbipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuningen
dc.typeArticleen
dc.identifier.journalNature Nanotechnologyen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United Statesen
dc.contributor.institutionLawrence Berkeley National Laboratory, Berkeley, United Statesen
kaust.grant.numberKUS-l1-001-12en
kaust.grant.numberKUS-F1-033-02en

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