Aharonov–Bohm interference in topological insulator nanoribbons

Handle URI:
http://hdl.handle.net/10754/597479
Title:
Aharonov–Bohm interference in topological insulator nanoribbons
Authors:
Peng, Hailin; Lai, Keji; Kong, Desheng; Meister, Stefan; Chen, Yulin; Qi, Xiao-Liang; Zhang, Shou-Cheng; Shen, Zhi-Xun; Cui, Yi
Abstract:
Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.
Citation:
Peng H, Lai K, Kong D, Meister S, Chen Y, et al. (2009) Aharonov–Bohm interference in topological insulator nanoribbons. Nat Mater. Available: http://dx.doi.org/10.1038/NMAT2609.
Publisher:
Springer Nature
Journal:
Nature Materials
KAUST Grant Number:
KUS-l1-001-12; KUS-F1-033-02
Issue Date:
13-Dec-2009
DOI:
10.1038/NMAT2609
PubMed ID:
20010826
Type:
Article
ISSN:
1476-1122; 1476-4660
Sponsors:
We would like to thank D. Goldhaber-Gordon, K. A. Moler, J. Analytis and J. Maciejko for the helpful discussion. Y.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12). H. P. acknowledges the support from MOST (2007CB936203). K. L. acknowledges the KAUST Postdoctoral Fellowship support No. KUS-F1-033-02. Y.L.C. and Z.X.S. acknowledge the support from the Department of Energy, Office of Basic Energy Sciences under contract DE-AC02-76SF00515.
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Full metadata record

DC FieldValue Language
dc.contributor.authorPeng, Hailinen
dc.contributor.authorLai, Kejien
dc.contributor.authorKong, Deshengen
dc.contributor.authorMeister, Stefanen
dc.contributor.authorChen, Yulinen
dc.contributor.authorQi, Xiao-Liangen
dc.contributor.authorZhang, Shou-Chengen
dc.contributor.authorShen, Zhi-Xunen
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-25T12:40:32Zen
dc.date.available2016-02-25T12:40:32Zen
dc.date.issued2009-12-13en
dc.identifier.citationPeng H, Lai K, Kong D, Meister S, Chen Y, et al. (2009) Aharonov–Bohm interference in topological insulator nanoribbons. Nat Mater. Available: http://dx.doi.org/10.1038/NMAT2609.en
dc.identifier.issn1476-1122en
dc.identifier.issn1476-4660en
dc.identifier.pmid20010826en
dc.identifier.doi10.1038/NMAT2609en
dc.identifier.urihttp://hdl.handle.net/10754/597479en
dc.description.abstractTopological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.en
dc.description.sponsorshipWe would like to thank D. Goldhaber-Gordon, K. A. Moler, J. Analytis and J. Maciejko for the helpful discussion. Y.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12). H. P. acknowledges the support from MOST (2007CB936203). K. L. acknowledges the KAUST Postdoctoral Fellowship support No. KUS-F1-033-02. Y.L.C. and Z.X.S. acknowledge the support from the Department of Energy, Office of Basic Energy Sciences under contract DE-AC02-76SF00515.en
dc.publisherSpringer Natureen
dc.titleAharonov–Bohm interference in topological insulator nanoribbonsen
dc.typeArticleen
dc.identifier.journalNature Materialsen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United Statesen
kaust.grant.numberKUS-l1-001-12en
kaust.grant.numberKUS-F1-033-02en

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