A tunable colloidal quantum dot photo field-effect transistor

Handle URI:
http://hdl.handle.net/10754/597428
Title:
A tunable colloidal quantum dot photo field-effect transistor
Authors:
Ghosh, Subir; Hoogland, Sjoerd; Sukhovatkin, Vlad; Levina, Larissa; Sargent, Edward H.
Abstract:
We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.
Citation:
Ghosh S, Hoogland S, Sukhovatkin V, Levina L, Sargent EH (2011) A tunable colloidal quantum dot photo field-effect transistor. Applied Physics Letters 99: 101102. Available: http://dx.doi.org/10.1063/1.3636438.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
KAUST Grant Number:
KUS-11-009-21
Issue Date:
2011
DOI:
10.1063/1.3636438
Type:
Article
ISSN:
0003-6951
Sponsors:
This publication is based in part on work supported by an award (No. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellent Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, Angstrom Engineering and Innovative Technology. We acknowledge the assistance of Dr. Ratan Debnath and Dr. Xihua Wang.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorGhosh, Subiren
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorSukhovatkin, Vladen
dc.contributor.authorLevina, Larissaen
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-02-25T12:33:02Zen
dc.date.available2016-02-25T12:33:02Zen
dc.date.issued2011en
dc.identifier.citationGhosh S, Hoogland S, Sukhovatkin V, Levina L, Sargent EH (2011) A tunable colloidal quantum dot photo field-effect transistor. Applied Physics Letters 99: 101102. Available: http://dx.doi.org/10.1063/1.3636438.en
dc.identifier.issn0003-6951en
dc.identifier.doi10.1063/1.3636438en
dc.identifier.urihttp://hdl.handle.net/10754/597428en
dc.description.abstractWe fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.en
dc.description.sponsorshipThis publication is based in part on work supported by an award (No. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellent Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, Angstrom Engineering and Innovative Technology. We acknowledge the assistance of Dr. Ratan Debnath and Dr. Xihua Wang.en
dc.publisherAIP Publishingen
dc.titleA tunable colloidal quantum dot photo field-effect transistoren
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionUniversity of Toronto, Toronto, Canadaen
kaust.grant.numberKUS-11-009-21en
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