Handle URI:
http://hdl.handle.net/10754/597293
Title:
A InGaN/GaN quantum dot green (λ=524 nm) laser
Authors:
Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab
Abstract:
The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.
Citation:
Zhang M, Banerjee A, Lee C-S, Hinckley JM, Bhattacharya P (2011) A InGaN/GaN quantum dot green (λ=524 nm) laser. Applied Physics Letters 98: 221104. Available: http://dx.doi.org/10.1063/1.3596436.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
KAUST Grant Number:
N012509-00
Issue Date:
2011
DOI:
10.1063/1.3596436
Type:
Article
ISSN:
0003-6951
Sponsors:
The work was supported by KAUST under Grant No. N012509-00.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Mengen
dc.contributor.authorBanerjee, Animeshen
dc.contributor.authorLee, Chi-Senen
dc.contributor.authorHinckley, John M.en
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2016-02-25T12:30:00Zen
dc.date.available2016-02-25T12:30:00Zen
dc.date.issued2011en
dc.identifier.citationZhang M, Banerjee A, Lee C-S, Hinckley JM, Bhattacharya P (2011) A InGaN/GaN quantum dot green (λ=524 nm) laser. Applied Physics Letters 98: 221104. Available: http://dx.doi.org/10.1063/1.3596436.en
dc.identifier.issn0003-6951en
dc.identifier.doi10.1063/1.3596436en
dc.identifier.urihttp://hdl.handle.net/10754/597293en
dc.description.abstractThe characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.en
dc.description.sponsorshipThe work was supported by KAUST under Grant No. N012509-00.en
dc.publisherAIP Publishingen
dc.titleA InGaN/GaN quantum dot green (λ=524 nm) laseren
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United Statesen
kaust.grant.numberN012509-00en
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