4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Handle URI:
http://hdl.handle.net/10754/597217
Title:
4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
Authors:
Lee, Changmin; Zhang, Chong; Cantore, Michael; Farrell, Robert M.; Oh, Sang Ho; Margalith, Tal; Speck, James S.; Nakamura, Shuji; Bowers, John E.; DenBaars, Steven P.
Abstract:
We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.
Citation:
Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, et al. (2015) 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express 23: 16232. Available: http://dx.doi.org/10.1364/oe.23.016232.
Publisher:
The Optical Society
Journal:
Optics Express
Issue Date:
10-Jun-2015
DOI:
10.1364/oe.23.016232
PubMed ID:
26193595
Type:
Article
ISSN:
1094-4087
Sponsors:
The authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
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Full metadata record

DC FieldValue Language
dc.contributor.authorLee, Changminen
dc.contributor.authorZhang, Chongen
dc.contributor.authorCantore, Michaelen
dc.contributor.authorFarrell, Robert M.en
dc.contributor.authorOh, Sang Hoen
dc.contributor.authorMargalith, Talen
dc.contributor.authorSpeck, James S.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorBowers, John E.en
dc.contributor.authorDenBaars, Steven P.en
dc.date.accessioned2016-02-25T12:28:10Zen
dc.date.available2016-02-25T12:28:10Zen
dc.date.issued2015-06-10en
dc.identifier.citationLee C, Zhang C, Cantore M, Farrell RM, Oh SH, et al. (2015) 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express 23: 16232. Available: http://dx.doi.org/10.1364/oe.23.016232.en
dc.identifier.issn1094-4087en
dc.identifier.pmid26193595en
dc.identifier.doi10.1364/oe.23.016232en
dc.identifier.urihttp://hdl.handle.net/10754/597217en
dc.description.abstractWe demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.en
dc.description.sponsorshipThe authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).en
dc.publisherThe Optical Societyen
dc.title4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communicationen
dc.typeArticleen
dc.identifier.journalOptics Expressen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, California 93106, USAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93117, USAen

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