3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

Handle URI:
http://hdl.handle.net/10754/597212
Title:
3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics
Authors:
Ko, Sangwon; Verploegen, Eric; Hong, Sanghyun; Mondal, Rajib; Hoke, Eric T.; Toney, Michael F.; McGehee, Michael D.; Bao, Zhenan
Abstract:
We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.
Citation:
Ko S, Verploegen E, Hong S, Mondal R, Hoke ET, et al. (2011) 3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics. Journal of the American Chemical Society 133: 16722–16725. Available: http://dx.doi.org/10.1021/ja207429s.
Publisher:
American Chemical Society (ACS)
Journal:
Journal of the American Chemical Society
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
26-Oct-2011
DOI:
10.1021/ja207429s
PubMed ID:
21970371
Type:
Article
ISSN:
0002-7863; 1520-5126
Sponsors:
This publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics, Award KUS-C1-015-21, made by King Abdullah University of Science and Technology (KAUST). Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource User Facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorKo, Sangwonen
dc.contributor.authorVerploegen, Ericen
dc.contributor.authorHong, Sanghyunen
dc.contributor.authorMondal, Rajiben
dc.contributor.authorHoke, Eric T.en
dc.contributor.authorToney, Michael F.en
dc.contributor.authorMcGehee, Michael D.en
dc.contributor.authorBao, Zhenanen
dc.date.accessioned2016-02-25T12:28:03Zen
dc.date.available2016-02-25T12:28:03Zen
dc.date.issued2011-10-26en
dc.identifier.citationKo S, Verploegen E, Hong S, Mondal R, Hoke ET, et al. (2011) 3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics. Journal of the American Chemical Society 133: 16722–16725. Available: http://dx.doi.org/10.1021/ja207429s.en
dc.identifier.issn0002-7863en
dc.identifier.issn1520-5126en
dc.identifier.pmid21970371en
dc.identifier.doi10.1021/ja207429sen
dc.identifier.urihttp://hdl.handle.net/10754/597212en
dc.description.abstractWe demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.en
dc.description.sponsorshipThis publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics, Award KUS-C1-015-21, made by King Abdullah University of Science and Technology (KAUST). Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource User Facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences.en
dc.publisherAmerican Chemical Society (ACS)en
dc.title3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaicsen
dc.typeArticleen
dc.identifier.journalJournal of the American Chemical Societyen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionStanford Synchrotron Radiation Laboratory, Menlo Park, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en

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