Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment

Handle URI:
http://hdl.handle.net/10754/596857
Title:
Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment
Authors:
Han, Hau-Vei; Lu, Ang-Yu; Lu, Li-Syuan; Huang, Jing-Kai; Li, Henan; Hsu, Chang-Lung; Lin, Yung-Chang; Chiu, Ming-Hui; Suenaga, Kazu; Chu, Chih-Wei; Kuo, Hao-Chung; Chang, Wen-Hao; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Shi, Yumeng
Abstract:
Atomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment 2016, 10 (1):1454 ACS Nano
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
30-Dec-2015
DOI:
10.1021/acsnano.5b06960
Type:
Article
ISSN:
1936-0851; 1936-086X
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06960
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHan, Hau-Veien
dc.contributor.authorLu, Ang-Yuen
dc.contributor.authorLu, Li-Syuanen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorLi, Henanen
dc.contributor.authorHsu, Chang-Lungen
dc.contributor.authorLin, Yung-Changen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorSuenaga, Kazuen
dc.contributor.authorChu, Chih-Weien
dc.contributor.authorKuo, Hao-Chungen
dc.contributor.authorChang, Wen-Haoen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorShi, Yumengen
dc.date.accessioned2016-02-21T10:20:31Zen
dc.date.available2016-02-21T10:20:31Zen
dc.date.issued2015-12-30en
dc.identifier.citationPhotoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment 2016, 10 (1):1454 ACS Nanoen
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.5b06960en
dc.identifier.urihttp://hdl.handle.net/10754/596857en
dc.description.abstractAtomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b06960en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06960.en
dc.subjecttransition-metal dichalcogenidesen
dc.subjectmolybdenum diselenideen
dc.subjectlayered materialsen
dc.subjectphotoluminescenceen
dc.subjecttwo-dimensional materialsen
dc.titlePhotoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatmenten
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Photonics and Institute of Electro-Optical Engineering and §Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwanen
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Hsinchu 300, Taiwanen
dc.contributor.institutionResearch Center for Applied Sciences, 128 Sec. 2, Academia Road, Nankang, Taipei 11529, Taiwanen
dc.contributor.institutionNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8560, Japanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHan, Hau-Veien
kaust.authorLu, Ang-Yuen
kaust.authorHuang, Jing-Kaien
kaust.authorLi, Henanen
kaust.authorChiu, Ming-Huien
kaust.authorLi, Lain-Jongen
kaust.authorShi, Yumengen
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