Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

Handle URI:
http://hdl.handle.net/10754/596842
Title:
Field Emission of ITO-Coated Vertically Aligned Nanowire Array.
Authors:
Lee, Changhwa; Lee, Seokwoo; Lee, Seung S
Abstract:
An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.
Citation:
Lee CH, Lee SW, Lee SS (2010) Field Emission of ITO-Coated Vertically Aligned Nanowire Array. Nanoscale Research Letters 5: 1128–1131. Available: http://dx.doi.org/10.1007/s11671-010-9613-2.
Publisher:
Springer Nature
Journal:
Nanoscale Research Letters
Issue Date:
29-Apr-2010
DOI:
10.1007/s11671-010-9613-2
PubMed ID:
20596363
PubMed Central ID:
PMC2894224
Type:
Article
ISSN:
1931-7573; 1556-276X
Sponsors:
This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorLee, Changhwaen
dc.contributor.authorLee, Seokwooen
dc.contributor.authorLee, Seung Sen
dc.date.accessioned2016-02-21T09:35:12Zen
dc.date.available2016-02-21T09:35:12Zen
dc.date.issued2010-04-29en
dc.identifier.citationLee CH, Lee SW, Lee SS (2010) Field Emission of ITO-Coated Vertically Aligned Nanowire Array. Nanoscale Research Letters 5: 1128–1131. Available: http://dx.doi.org/10.1007/s11671-010-9613-2.en
dc.identifier.issn1931-7573en
dc.identifier.issn1556-276Xen
dc.identifier.pmid20596363en
dc.identifier.doi10.1007/s11671-010-9613-2en
dc.identifier.urihttp://hdl.handle.net/10754/596842en
dc.description.abstractAn indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.en
dc.description.sponsorshipThis work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST).en
dc.publisherSpringer Natureen
dc.rightsThis article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.en
dc.subjectNanowireen
dc.subjectTop–downen
dc.subjectField Emissionen
dc.subjectItoen
dc.titleField Emission of ITO-Coated Vertically Aligned Nanowire Array.en
dc.typeArticleen
dc.identifier.journalNanoscale Research Lettersen
dc.identifier.pmcidPMC2894224en
dc.contributor.institutionKorea Advanced Institute of Science & Technology, Yusong, South Koreaen
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