Cylindrical-shaped nanotube field effect transistor

Handle URI:
http://hdl.handle.net/10754/595856
Title:
Cylindrical-shaped nanotube field effect transistor
Authors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 )
Assignee:
King Abdullah University of Science and Technology
Abstract:
A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Issue Date:
29-Dec-2015
Submitted date:
2012-03-02
Type:
Patent
Patent Number:
US 9224813 B2
Application Number:
US 20140008606 A1
Patent Status:
Granted Patent
Additional Links:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9224813.PN.&OS=PN/9224813&RS=PN/9224813; http://assignment.uspto.gov/#/search?q=20140008606&sort=patAssignorEarliestExDate%20desc&synonyms=false; http://www.google.com/patents/US9224813; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014008606A1&KC=A1&FT=D
Appears in Collections:
Patents; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorSmith, Casey E.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.date.accessioned2016-02-07T14:42:51Zen
dc.date.available2016-02-07T14:42:51Zen
dc.date.issued2015-12-29en
dc.date.submitted2012-03-02en
dc.identifier.urihttp://hdl.handle.net/10754/595856en
dc.description.abstractA cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.en
dc.relation.urlhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9224813.PN.&OS=PN/9224813&RS=PN/9224813en
dc.relation.urlhttp://assignment.uspto.gov/#/search?q=20140008606&sort=patAssignorEarliestExDate%20desc&synonyms=falseen
dc.relation.urlhttp://www.google.com/patents/US9224813en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014008606A1&KC=A1&FT=Den
dc.titleCylindrical-shaped nanotube field effect transistoren
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.description.statusGranted Patenten
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.patentnumberUS 9224813 B2en
dc.identifier.applicationnumberUS 20140008606 A1en
dc.identifier.uspatentnumber9224813en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.