Methods and apparatuses for low-noise magnetic sensors

Handle URI:
http://hdl.handle.net/10754/595590
Title:
Methods and apparatuses for low-noise magnetic sensors
Authors:
Kosel, Jurgen ( 0000-0002-8998-8275 ) ; Sun, Jian
Assignee:
King Abdullah University of Science and Technology
Abstract:
Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
KAUST Department:
Electrical Engineering Program
Issue Date:
20-Oct-2015
Submitted date:
2011-07-20
Type:
Patent
Patent Number:
US 9164153 B2
Application Number:
US 20120038356 A1
Patent Status:
Granted Patent
Additional Links:
http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9164153; http://assignment.uspto.gov/#/search?adv=patNum:9164153; http://www.google.com/patents/US9164153; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=9164153B2&KC=B2&FT=D
Appears in Collections:
Patents; Electrical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorKosel, Jurgenen
dc.contributor.authorSun, Jianen
dc.date.accessioned2016-02-04T13:42:12Zen
dc.date.available2016-02-04T13:42:12Zen
dc.date.issued2015-10-20en
dc.date.submitted2011-07-20en
dc.identifier.urihttp://hdl.handle.net/10754/595590en
dc.description.abstractMagnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.en
dc.relation.urlhttp://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9164153en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=patNum:9164153en
dc.relation.urlhttp://www.google.com/patents/US9164153en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=9164153B2&KC=B2&FT=Den
dc.titleMethods and apparatuses for low-noise magnetic sensorsen
dc.typePatenten
dc.contributor.departmentElectrical Engineering Programen
dc.description.statusGranted Patenten
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.patentnumberUS 9164153 B2en
dc.identifier.applicationnumberUS 20120038356 A1en
dc.identifier.uspatentnumber9164153en
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