Defect free single crystal thin layer

Handle URI:
http://hdl.handle.net/10754/595585
Title:
Defect free single crystal thin layer
Authors:
Elafandy, Rami Tarek Mahmoud; Ooi, Boon S. ( 0000-0001-9606-5578 )
Assignee:
King Abdullah University of Science and Technology
Abstract:
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
KAUST Department:
Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Issue Date:
28-Jan-2016
Submitted date:
2015-09-11
Type:
Patent
Application Number:
US 20160027656 A1
Patent Status:
Published Application
Additional Links:
http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220160027656%22.PGNR.&OS=DN/20160027656&RS=DN/20160027656; http://assignment.uspto.gov/#/search?adv=publNum:20160027656; http://www.google.com/patents/US20160027656; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2016027656A1&KC=A1&FT=D
Appears in Collections:
Patents; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElafandy, Rami Tarek Mahmouden
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-02-04T13:33:55Zen
dc.date.available2016-02-04T13:33:55Zen
dc.date.issued2016-01-28en
dc.date.submitted2015-09-11en
dc.identifier.urihttp://hdl.handle.net/10754/595585en
dc.description.abstractA gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.en
dc.relation.urlhttp://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220160027656%22.PGNR.&OS=DN/20160027656&RS=DN/20160027656en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=publNum:20160027656en
dc.relation.urlhttp://www.google.com/patents/US20160027656en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2016027656A1&KC=A1&FT=Den
dc.titleDefect free single crystal thin layeren
dc.typePatenten
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.applicationnumberUS 20160027656 A1en
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