Method For Producing Mechanically Flexible Silicon Substrate

Handle URI:
http://hdl.handle.net/10754/595312
Title:
Method For Producing Mechanically Flexible Silicon Substrate
Authors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 )
Assignee:
King Abdullah University of Science and Technology
Abstract:
A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.
KAUST Department:
Electrical Engineering Program
Issue Date:
28-Aug-2014
Submitted date:
2014-04-02
Type:
Patent
Application Number:
US 20140239459 A1
Patent Status:
Published Application
Additional Links:
http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140239459%22.PGNR.&OS=DN/20140239459&RS=DN/20140239459; http://assignment.uspto.gov/#/search?adv=publNum:20140239459; http://www.google.com/patents/US20140239459; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014239459A1&KC=A1&FT=D
Appears in Collections:
Patents; Electrical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorRojas, Jhonathan Prietoen
dc.date.accessioned2016-01-31T15:17:16Zen
dc.date.available2016-01-31T15:17:16Zen
dc.date.issued2014-08-28en
dc.date.submitted2014-04-02en
dc.identifier.urihttp://hdl.handle.net/10754/595312en
dc.description.abstractA method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.en
dc.relation.urlhttp://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140239459%22.PGNR.&OS=DN/20140239459&RS=DN/20140239459en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=publNum:20140239459en
dc.relation.urlhttp://www.google.com/patents/US20140239459en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014239459A1&KC=A1&FT=Den
dc.titleMethod For Producing Mechanically Flexible Silicon Substrateen
dc.typePatenten
dc.contributor.departmentElectrical Engineering Programen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.applicationnumberUS 20140239459 A1en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.