Low-noise Magnetic Sensors

Handle URI:
http://hdl.handle.net/10754/595006
Title:
Low-noise Magnetic Sensors
Authors:
Kosel, Jurgen ( 0000-0002-8998-8275 ) ; Sun, Jian
Assignee:
King Abdullah University of Science and Technology
Abstract:
Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Issue Date:
27-Mar-2014
Submitted date:
2013-12-05
Type:
Patent
Application Number:
US 20140084913 A1
Patent Status:
Published Application
Additional Links:
http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140084913%22.PGNR.&OS=DN/20140084913&RS=DN/20140084913; http://assignment.uspto.gov/#/search?adv=publNum:20140084913; http://www.google.com/patents/US20140084913; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014084913A1&KC=A1&FT=D
Appears in Collections:
Patents; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKosel, Jurgenen
dc.contributor.authorSun, Jianen
dc.date.accessioned2016-01-27T13:56:43Zen
dc.date.available2016-01-27T13:56:43Zen
dc.date.issued2014-03-27en
dc.date.submitted2013-12-05en
dc.identifier.urihttp://hdl.handle.net/10754/595006en
dc.description.abstractMagnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.en
dc.relation.urlhttp://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140084913%22.PGNR.&OS=DN/20140084913&RS=DN/20140084913en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=publNum:20140084913en
dc.relation.urlhttp://www.google.com/patents/US20140084913en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014084913A1&KC=A1&FT=Den
dc.titleLow-noise Magnetic Sensorsen
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.applicationnumberUS 20140084913 A1en
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