Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

Handle URI:
http://hdl.handle.net/10754/594973
Title:
Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb
Authors:
Zhang, Qingyun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb 2016, 93 (4) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
21-Jan-2016
DOI:
10.1103/PhysRevB.93.045312
Type:
Article
ISSN:
2469-9950; 2469-9969
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.93.045312
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Qingyunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2016-01-27T13:17:42Zen
dc.date.available2016-01-27T13:17:42Zen
dc.date.issued2016-01-21en
dc.identifier.citationEmergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb 2016, 93 (4) Physical Review Ben
dc.identifier.issn2469-9950en
dc.identifier.issn2469-9969en
dc.identifier.doi10.1103/PhysRevB.93.045312en
dc.identifier.urihttp://hdl.handle.net/10754/594973en
dc.description.abstractUsing first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.93.045312en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleEmergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSben
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhang, Qingyunen
kaust.authorSchwingenschlögl, Udoen
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