Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

Handle URI:
http://hdl.handle.net/10754/594842
Title:
Defect-impurity complex induced long-range ferromagnetism in GaN nanowires
Authors:
Assa Aravindh, S; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Defect-impurity complex induced long-range ferromagnetism in GaN nanowires 2015, 2 (12):126104 Materials Research Express
Publisher:
IOP Publishing
Journal:
Materials Research Express
Issue Date:
14-Dec-2015
DOI:
10.1088/2053-1591/2/12/126104
Type:
Article
ISSN:
2053-1591
Additional Links:
http://stacks.iop.org/2053-1591/2/i=12/a=126104?key=crossref.a2bd549580914f18a691edaaf50a7c59
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAssa Aravindh, Sen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2016-01-26T10:23:14Zen
dc.date.available2016-01-26T10:23:14Zen
dc.date.issued2015-12-14en
dc.identifier.citationDefect-impurity complex induced long-range ferromagnetism in GaN nanowires 2015, 2 (12):126104 Materials Research Expressen
dc.identifier.issn2053-1591en
dc.identifier.doi10.1088/2053-1591/2/12/126104en
dc.identifier.urihttp://hdl.handle.net/10754/594842en
dc.description.abstractPresent work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urlhttp://stacks.iop.org/2053-1591/2/i=12/a=126104?key=crossref.a2bd549580914f18a691edaaf50a7c59en
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. http://creativecommons.org/licenses/by/3.0en
dc.titleDefect-impurity complex induced long-range ferromagnetism in GaN nanowiresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalMaterials Research Expressen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAravindh, S. Assaen
kaust.authorRoqan, Iman S.en
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