Silicon germanium mask for deep silicon etching

Handle URI:
http://hdl.handle.net/10754/594727
Title:
Silicon germanium mask for deep silicon etching
Authors:
Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad
Assignee:
King Abdullah University of Science and Technology
Abstract:
Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
KAUST Department:
King Abdullah University of Science and Technology
Issue Date:
29-Jul-2014
Submitted date:
2012-03-01
Type:
Patent
Patent Number:
US 8791021 B2
Application Number:
US 20120225557 A1
Patent Status:
Granted Patent
Additional Links:
http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=8791021; http://assignment.uspto.gov/#/search?adv=patNum:8791021; http://www.google.com/patents/US8791021; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=8791021B2&KC=B2&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorSerry, Mohameden
dc.contributor.authorRubin, Andrewen
dc.contributor.authorRefaat, Mohameden
dc.contributor.authorSedky, Sherifen
dc.contributor.authorAbdo, Mohammaden
dc.date.accessioned2016-01-24T14:02:59Zen
dc.date.available2016-01-24T14:02:59Zen
dc.date.issued2014-07-29en
dc.date.submitted2012-03-01en
dc.identifier.urihttp://hdl.handle.net/10754/594727en
dc.description.abstractPolycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.en
dc.relation.urlhttp://patft.uspto.gov/netacgi/nph-Parser?patentnumber=8791021en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=patNum:8791021en
dc.relation.urlhttp://www.google.com/patents/US8791021en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=8791021B2&KC=B2&FT=Den
dc.titleSilicon germanium mask for deep silicon etchingen
dc.typePatenten
dc.contributor.departmentKing Abdullah University of Science and Technologyen
dc.description.statusGranted Patenten
dc.contributor.assigneeKing Abdullah University of Science and Technologyen
dc.description.countryUnited Statesen
dc.identifier.patentnumberUS 8791021 B2en
dc.identifier.applicationnumberUS 20120225557 A1en
dc.identifier.uspatentnumber8791021en
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