Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing

Handle URI:
http://hdl.handle.net/10754/594311
Title:
Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing
Authors:
Niazi, Muhammad Rizwan ( 0000-0003-0449-1559 ) ; Li, Ruipeng; Abdelsamie, Maged ( 0000-0002-4631-5409 ) ; Zhao, Kui ( 0000-0001-9348-7943 ) ; Anjum, Dalaver H.; Payne, Marcia M.; Anthony, John; Smilgies, Detlef-M.; Amassian, Aram ( 0000-0002-5734-1194 )
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Imaging and Characterization Core Lab
Citation:
Niazi MR, Li R, Abdelsamie M, Zhao K, Anjum DH, et al. (2015) Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing. Advanced Functional Materials: n/a–n/a. Available: http://dx.doi.org/10.1002/adfm.201502428.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
Sep-2015
DOI:
10.1002/adfm.201502428
Type:
Article
ISSN:
1616-301X
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorNiazi, Muhammad Rizwanen
dc.contributor.authorLi, Ruipengen
dc.contributor.authorAbdelsamie, Mageden
dc.contributor.authorZhao, Kuien
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorPayne, Marcia M.en
dc.contributor.authorAnthony, Johnen
dc.contributor.authorSmilgies, Detlef-M.en
dc.contributor.authorAmassian, Aramen
dc.date.accessioned2016-01-19T14:45:46Zen
dc.date.available2016-01-19T14:45:46Zen
dc.date.issued2015-09en
dc.identifier.citationNiazi MR, Li R, Abdelsamie M, Zhao K, Anjum DH, et al. (2015) Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing. Advanced Functional Materials: n/a–n/a. Available: http://dx.doi.org/10.1002/adfm.201502428.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201502428en
dc.identifier.urihttp://hdl.handle.net/10754/594311en
dc.publisherWiley-Blackwellen
dc.titleContact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processingen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionCornell High Energy Synchrotron Source (CHESS); Cornell University; Ithaca NY 14853 USAen
dc.contributor.institutionDepartment of Chemistry; University of KentuckyLexington; KY 40506 USAen
kaust.authorNiazi, Muhammad Rizwanen
kaust.authorLi, Ruipengen
kaust.authorAbdelsamie, Mageden
kaust.authorZhao, Kuien
kaust.authorAnjum, Dalaver H.en
kaust.authorAmassian, Aramen
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