Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices

Handle URI:
http://hdl.handle.net/10754/594305
Title:
Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices
Authors:
Wu, Xing; Mei, Sen; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Cha, Dong Kyu; Li, Kun; Pey, Kin Leong
KAUST Department:
Imaging and Characterization Core Lab
Citation:
Wu X, Mei S, Bosman M, Raghavan N, Zhang X, et al. (2015) Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices . Advanced Electronic Materials 1: n/a–n/a. Available: http://dx.doi.org/10.1002/aelm.201500130.
Publisher:
Wiley-Blackwell
Journal:
Advanced Electronic Materials
Issue Date:
9-Oct-2015
DOI:
10.1002/aelm.201500130
Type:
Article
ISSN:
2199-160X
Sponsors:
Singapore University of Technology and Design (SUTD)-Zhejiang University (ZJU) Research Collaboration[ZJURP1300104]
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, Xingen
dc.contributor.authorMei, Senen
dc.contributor.authorBosman, Michelen
dc.contributor.authorRaghavan, Nagarajanen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorLi, Kunen
dc.contributor.authorPey, Kin Leongen
dc.date.accessioned2016-01-19T14:45:38Zen
dc.date.available2016-01-19T14:45:38Zen
dc.date.issued2015-10-09en
dc.identifier.citationWu X, Mei S, Bosman M, Raghavan N, Zhang X, et al. (2015) Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices . Advanced Electronic Materials 1: n/a–n/a. Available: http://dx.doi.org/10.1002/aelm.201500130.en
dc.identifier.issn2199-160Xen
dc.identifier.doi10.1002/aelm.201500130en
dc.identifier.urihttp://hdl.handle.net/10754/594305en
dc.description.sponsorshipSingapore University of Technology and Design (SUTD)-Zhejiang University (ZJU) Research Collaboration[ZJURP1300104]en
dc.publisherWiley-Blackwellen
dc.titleEvolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devicesen
dc.typeArticleen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalAdvanced Electronic Materialsen
dc.contributor.institutionDepartment of Electrical Engineering; East China Normal University; 500 Dongchuan Road Shanghai 200241 Chinaen
dc.contributor.institutionSingapore University of Technology and Design; 8 Somapah Road 487372 Singaporeen
dc.contributor.institutionInstitute of Materials Research and Engineering; A*STAR (Agency for Science, Technology and Research); 3 Research Link 117602 Singaporeen
kaust.authorZhang, Xixiangen
kaust.authorCha, Dong Kyuen
kaust.authorLi, Kunen
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