Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering

Handle URI:
http://hdl.handle.net/10754/594288
Title:
Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering
Authors:
Liu, Hsiang Lin; Guo, Huaihong; Yang, Teng; Zhang, Zhidong; Kumamoto, Yasuaki; Shen, Chih Chiang; Hsu, Yu Te; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Saito, Riichiro; Kawata, Satoshi
Abstract:
We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Liu H-L, Guo H, Yang T, Zhang Z, Kumamoto Y, et al. (2015) Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering . Phys Chem Chem Phys 17: 14561–14568. Available: http://dx.doi.org/10.1039/c5cp01347j.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Phys. Chem. Chem. Phys.
Issue Date:
2015
DOI:
10.1039/c5cp01347j
PubMed ID:
25969355
Type:
Article
ISSN:
1463-9076; 1463-9084
Sponsors:
51331006, NSFC, National Natural Science Foundation of China
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLiu, Hsiang Linen
dc.contributor.authorGuo, Huaihongen
dc.contributor.authorYang, Tengen
dc.contributor.authorZhang, Zhidongen
dc.contributor.authorKumamoto, Yasuakien
dc.contributor.authorShen, Chih Chiangen
dc.contributor.authorHsu, Yu Teen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorSaito, Riichiroen
dc.contributor.authorKawata, Satoshien
dc.date.accessioned2016-01-19T14:45:17Zen
dc.date.available2016-01-19T14:45:17Zen
dc.date.issued2015en
dc.identifier.citationLiu H-L, Guo H, Yang T, Zhang Z, Kumamoto Y, et al. (2015) Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering . Phys Chem Chem Phys 17: 14561–14568. Available: http://dx.doi.org/10.1039/c5cp01347j.en
dc.identifier.issn1463-9076en
dc.identifier.issn1463-9084en
dc.identifier.pmid25969355en
dc.identifier.doi10.1039/c5cp01347jen
dc.identifier.urihttp://hdl.handle.net/10754/594288en
dc.description.abstractWe present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.en
dc.description.sponsorship51331006, NSFC, National Natural Science Foundation of Chinaen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleAnomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scatteringen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhys. Chem. Chem. Phys.en
dc.contributor.institutionDepartment of Physics, National Taiwan Normal University, Taipei, Taiwanen
dc.contributor.institutionDepartment of Physics, Tohoku University, Sendai, Japanen
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, Chinaen
dc.contributor.institutionNear-field Nanophotonics Research Team, RIKEN, 2-1 Hirosawa, Wako Saitama, Japanen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwanen
dc.contributor.institutionDepartment of Applied Physics, Osaka University, 2-1 Yamadaoka Suita, Osaka, Japanen
kaust.authorLi, Lain-Jongen

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