Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Handle URI:
http://hdl.handle.net/10754/594275
Title:
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
Authors:
Li, Ming Yang; Shi, Yumeng; Cheng, Chia Chin; Lu, Li Syuan; Lin, Yung Chang; Tang, Hao-Ling; Tsai, Meng Lin; Chu, Chih Wei; Wei, Kung Hwa; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Chang, Wen Hao; Suenaga, Kazu; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Li M-Y, Shi Y, Cheng C-C, Lu L-S, Lin Y-C, et al. (2015) Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349: 524–528. Available: http://dx.doi.org/10.1126/science.aab4097.
Publisher:
American Association for the Advancement of Science (AAAS)
Journal:
Science
Issue Date:
30-Jul-2015
DOI:
10.1126/science.aab4097
PubMed ID:
26228146
Type:
Article
ISSN:
0036-8075; 1095-9203
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Ming Yangen
dc.contributor.authorShi, Yumengen
dc.contributor.authorCheng, Chia Chinen
dc.contributor.authorLu, Li Syuanen
dc.contributor.authorLin, Yung Changen
dc.contributor.authorTang, Hao-Lingen
dc.contributor.authorTsai, Meng Linen
dc.contributor.authorChu, Chih Weien
dc.contributor.authorWei, Kung Hwaen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorChang, Wen Haoen
dc.contributor.authorSuenaga, Kazuen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2016-01-19T14:44:57Zen
dc.date.available2016-01-19T14:44:57Zen
dc.date.issued2015-07-30en
dc.identifier.citationLi M-Y, Shi Y, Cheng C-C, Lu L-S, Lin Y-C, et al. (2015) Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349: 524–528. Available: http://dx.doi.org/10.1126/science.aab4097.en
dc.identifier.issn0036-8075en
dc.identifier.issn1095-9203en
dc.identifier.pmid26228146en
dc.identifier.doi10.1126/science.aab4097en
dc.identifier.urihttp://hdl.handle.net/10754/594275en
dc.description.abstractTwo-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.en
dc.publisherAmerican Association for the Advancement of Science (AAAS)en
dc.titleEpitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interfaceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalScienceen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, Taiwanen
dc.contributor.institutionDepartment of Material Science and Engineering, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japanen
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taiwanen
kaust.authorLi, Ming-yangen
kaust.authorShi, Yumengen
kaust.authorTang, Hao-Lingen
kaust.authorTsai, Meng Linen
kaust.authorHe, Jr-Hauen
kaust.authorLi, Lain-Jongen

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