The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells

Handle URI:
http://hdl.handle.net/10754/594258
Title:
The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells
Authors:
Banavoth, Murali ( 0000-0002-7806-2274 ) ; El Labban, Abdulrahman ( 0000-0001-9891-0851 ) ; Eid, Jessica; Alarousu, Erkki; Shi, Dong ( 0000-0003-4009-2686 ) ; Zhang, Qiang; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Bakr, Osman M. ( 0000-0002-3428-1002 ) ; Mohammed, Omar F. ( 0000-0001-8500-1130 )
Abstract:
This report presents a new strategy for improving solar cell power conversion efficiencies (PCEs) through grain alignment and morphology control of the ZnO electron transport layer (ETL) prepared by radio frequency (RF) magnetron sputtering. The systematic control over the ETL's grain alignment and thickness is shown, by varying the deposition pressure and operating substrate temperature during the deposition. Notably, a high PCE of 6.9%, short circuit current density (Jsc) of 12.8 mA cm-2, open circuit voltage (Voc) of 910 mV, and fill factor of 59% are demonstrated using the poly(benzo[1,2-b:4,5-b']dithiophene-thieno[3,4-c]pyrrole-4,6-dione):[6,6]-phenyl-C71-butyric acid methyl ester polymer blend with ETLs prepared at room temperature exhibiting oriented and aligned rod-like ZnO grains. Increasing the deposition temperature during the ZnO sputtering induces morphological cleavage of the rod-like ZnO grains and therefore reduced conductivity from 7.2 × 10-13 to ≈1.7 × 10-14 S m-1 and PCE from 6.9% to 4.28%. An investigation of the charge carrier dynamics by femtosecond (fs) transient absorption spectroscopy with broadband capability reveals clear evidence of faster carrier recombination for a ZnO layer deposited at higher temperature, which is consistent with the conductivity and device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)
Citation:
Murali B, Labban AE, Eid J, Alarousu E, Shi D, et al. (2015) The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells. Small 11: 5272–5279. Available: http://dx.doi.org/10.1002/smll.201500924.
Publisher:
Wiley-Blackwell
Journal:
Small
Issue Date:
13-Aug-2015
DOI:
10.1002/smll.201500924
PubMed ID:
26270242
Type:
Article
ISSN:
1613-6810
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorBanavoth, Muralien
dc.contributor.authorEl Labban, Abdulrahmanen
dc.contributor.authorEid, Jessicaen
dc.contributor.authorAlarousu, Erkkien
dc.contributor.authorShi, Dongen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorBakr, Osman M.en
dc.contributor.authorMohammed, Omar F.en
dc.date.accessioned2016-01-19T14:44:33Zen
dc.date.available2016-01-19T14:44:33Zen
dc.date.issued2015-08-13en
dc.identifier.citationMurali B, Labban AE, Eid J, Alarousu E, Shi D, et al. (2015) The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells. Small 11: 5272–5279. Available: http://dx.doi.org/10.1002/smll.201500924.en
dc.identifier.issn1613-6810en
dc.identifier.pmid26270242en
dc.identifier.doi10.1002/smll.201500924en
dc.identifier.urihttp://hdl.handle.net/10754/594258en
dc.description.abstractThis report presents a new strategy for improving solar cell power conversion efficiencies (PCEs) through grain alignment and morphology control of the ZnO electron transport layer (ETL) prepared by radio frequency (RF) magnetron sputtering. The systematic control over the ETL's grain alignment and thickness is shown, by varying the deposition pressure and operating substrate temperature during the deposition. Notably, a high PCE of 6.9%, short circuit current density (Jsc) of 12.8 mA cm-2, open circuit voltage (Voc) of 910 mV, and fill factor of 59% are demonstrated using the poly(benzo[1,2-b:4,5-b']dithiophene-thieno[3,4-c]pyrrole-4,6-dione):[6,6]-phenyl-C71-butyric acid methyl ester polymer blend with ETLs prepared at room temperature exhibiting oriented and aligned rod-like ZnO grains. Increasing the deposition temperature during the ZnO sputtering induces morphological cleavage of the rod-like ZnO grains and therefore reduced conductivity from 7.2 × 10-13 to ≈1.7 × 10-14 S m-1 and PCE from 6.9% to 4.28%. An investigation of the charge carrier dynamics by femtosecond (fs) transient absorption spectroscopy with broadband capability reveals clear evidence of faster carrier recombination for a ZnO layer deposited at higher temperature, which is consistent with the conductivity and device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectgrains alignmenten
dc.subjecthigh efficiencyen
dc.subjectinverted bulk heterojunctionen
dc.subjectPBDTTPD:PCBMen
dc.subjecttransient absorption spectroscopyen
dc.titleThe Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cellsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalSmallen
kaust.authorBanavoth, Muralien
kaust.authorEl Labban, Abdulrahmanen
kaust.authorEid, Jessicaen
kaust.authorAlarousu, Erkkien
kaust.authorShi, Dongen
kaust.authorZhang, Qiangen
kaust.authorZhang, Xixiangen
kaust.authorBakr, Osman M.en
kaust.authorMohammed, Omar F.en

Related articles on PubMed

All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.