Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

Handle URI:
http://hdl.handle.net/10754/594248
Title:
Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering
Authors:
Baseer Haider, M.; Al-Kuhaili, Mohammad F.; Durrani, S. M A; Singaravelu, Venkatesh; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Haider MB, Al-Kuhaili MF, Durrani SMA, Singaravelu V, Roqan I (2015) Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering. MRS Proceedings 1731. Available: http://dx.doi.org/10.1557/opl.2015.355.
Publisher:
Cambridge University Press (CUP)
Journal:
MRS Proceedings
Conference/Event name:
2014 MRS Fall Meeting
Issue Date:
2015
DOI:
10.1557/opl.2015.355
Type:
Conference Paper
ISSN:
1946-4274
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBaseer Haider, M.en
dc.contributor.authorAl-Kuhaili, Mohammad F.en
dc.contributor.authorDurrani, S. M Aen
dc.contributor.authorSingaravelu, Venkateshen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2016-01-19T14:44:19Zen
dc.date.available2016-01-19T14:44:19Zen
dc.date.issued2015en
dc.identifier.citationHaider MB, Al-Kuhaili MF, Durrani SMA, Singaravelu V, Roqan I (2015) Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering. MRS Proceedings 1731. Available: http://dx.doi.org/10.1557/opl.2015.355.en
dc.identifier.issn1946-4274en
dc.identifier.doi10.1557/opl.2015.355en
dc.identifier.urihttp://hdl.handle.net/10754/594248en
dc.description.abstractThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.en
dc.publisherCambridge University Press (CUP)en
dc.titleThin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputteringen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalMRS Proceedingsen
dc.conference.date2014-11-30 to 2014-12-05en
dc.conference.name2014 MRS Fall Meetingen
dc.conference.locationBoston, MA, USAen
dc.contributor.institutionPhysics Department, King Fahd University of Petroelum and Mineral, Dhahran, Saudi Arabiaen
kaust.authorSingaravelu, Venkateshen
kaust.authorRoqan, Iman S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.