High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

Handle URI:
http://hdl.handle.net/10754/594246
Title:
High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors
Authors:
Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chen, Chii Dong; Wang, Kang L.
Abstract:
The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Torres CM, Lan Y-W, Zeng C, Chen J-H, Kou X, et al. (2015) High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors . Nano Lett 15: 7905–7912. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03768.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
9-Dec-2015
DOI:
10.1021/acs.nanolett.5b03768
PubMed ID:
26524388
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
National Science Council[NSC 103-2917-I-564-017]; U.S. Department of Defense; Division of Emerging Frontiers in Research and Innovation[EFRI-1433541]
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03768
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTorres, Carlos M.en
dc.contributor.authorLan, Yann Wenen
dc.contributor.authorZeng, Caifuen
dc.contributor.authorChen, Jyun Hongen
dc.contributor.authorKou, Xufengen
dc.contributor.authorNavabi, Aryanen
dc.contributor.authorTang, Jianshien
dc.contributor.authorMontazeri, Mohammaden
dc.contributor.authorAdleman, James R.en
dc.contributor.authorLerner, Mitchell B.en
dc.contributor.authorZhong, Yuan Liangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChen, Chii Dongen
dc.contributor.authorWang, Kang L.en
dc.date.accessioned2016-01-19T14:44:16Zen
dc.date.available2016-01-19T14:44:16Zen
dc.date.issued2015-12-09en
dc.identifier.citationTorres CM, Lan Y-W, Zeng C, Chen J-H, Kou X, et al. (2015) High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors . Nano Lett 15: 7905–7912. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03768.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid26524388en
dc.identifier.doi10.1021/acs.nanolett.5b03768en
dc.identifier.urihttp://hdl.handle.net/10754/594246en
dc.description.abstractThe vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.en
dc.description.sponsorshipNational Science Council[NSC 103-2917-I-564-017]en
dc.description.sponsorshipU.S. Department of Defenseen
dc.description.sponsorshipDivision of Emerging Frontiers in Research and Innovation[EFRI-1433541]en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03768en
dc.subject2D materialsen
dc.subjecthigh-current gainen
dc.subjecthot-electron transporten
dc.subjectMoS2en
dc.subjecttransition metal dichalcogenidesen
dc.titleHigh-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDepartment of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, United Statesen
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 115, Taiwanen
dc.contributor.institutionDepartment of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli, Taiwanen
dc.contributor.institutionSpace and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, CA, United Statesen
kaust.authorLi, Lain-Jongen

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