Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Handle URI:
http://hdl.handle.net/10754/594212
Title:
Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs
Authors:
Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chen, Chang Hsiao; Chuang, Cheng Hao; Lee, Ming Dao; Chen, Yi Ju; Hou, Yun Fang; Lin, Chang Hsien; Chen, Chun Chi; Wu, Bo Wei; Wu, Cheng San; Yang, Ivy; Lee, Yao Jen; Yeh, Wen Kuan; Wang, Tahui; Yang, Fu Liang; Hu, Chenming
Abstract:
Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Chen M-C, Lin C-Y, Kai-Hsin Li, Li L-J, Chen C-H, et al. (2014) Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. 2014 IEEE International Electron Devices Meeting. Available: http://dx.doi.org/10.1109/iedm.2014.7047163.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2014 IEEE International Electron Devices Meeting
Conference/Event name:
2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Issue Date:
Dec-2014
DOI:
10.1109/iedm.2014.7047163
Type:
Conference Paper
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Min Chengen
dc.contributor.authorLin, Chia Yien
dc.contributor.authorLi, Kai Hsinen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChen, Chang Hsiaoen
dc.contributor.authorChuang, Cheng Haoen
dc.contributor.authorLee, Ming Daoen
dc.contributor.authorChen, Yi Juen
dc.contributor.authorHou, Yun Fangen
dc.contributor.authorLin, Chang Hsienen
dc.contributor.authorChen, Chun Chien
dc.contributor.authorWu, Bo Weien
dc.contributor.authorWu, Cheng Sanen
dc.contributor.authorYang, Ivyen
dc.contributor.authorLee, Yao Jenen
dc.contributor.authorYeh, Wen Kuanen
dc.contributor.authorWang, Tahuien
dc.contributor.authorYang, Fu Liangen
dc.contributor.authorHu, Chenmingen
dc.date.accessioned2016-01-19T14:43:21Zen
dc.date.available2016-01-19T14:43:21Zen
dc.date.issued2014-12en
dc.identifier.citationChen M-C, Lin C-Y, Kai-Hsin Li, Li L-J, Chen C-H, et al. (2014) Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. 2014 IEEE International Electron Devices Meeting. Available: http://dx.doi.org/10.1109/iedm.2014.7047163.en
dc.identifier.doi10.1109/iedm.2014.7047163en
dc.identifier.urihttp://hdl.handle.net/10754/594212en
dc.description.abstractStackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleHybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journal2014 IEEE International Electron Devices Meetingen
dc.conference.date15 December 2014 through 17 December 2014en
dc.conference.name2014 60th IEEE International Electron Devices Meeting, IEDM 2014en
dc.contributor.institutionNational Nano Device Laboratories, National Applied Research Laboratories, Taiwanen
dc.contributor.institutionDept. of Phys., Tamkang University, Taiwanen
dc.contributor.institutionDept. of Electronics Eng., National Chiao-Tung University, Taiwanen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taiwanen
dc.contributor.institutionDept. of Electrical Eng. and Computer Science, University of California, Berkeley, United Statesen
kaust.authorLi, Lain-Jongen
kaust.authorChen, Chang Hsiaoen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.