Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Handle URI:
http://hdl.handle.net/10754/594200
Title:
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
Authors:
Hus, Jui Wei; Chen, Chien Chia; Lee, Ming Jui; Liu, Hsueh Hsing; Chyi, Jen Inn; Huang, Michael R S; Liu, Chuan Pu; Wei, Tzu Chiao; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Lai, Kun Yu
Abstract:
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Hus J-W, Chen C-C, Lee M-J, Liu H-H, Chyi J-I, et al. (2015) Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. Advanced Materials 27: 4845–4850. Available: http://dx.doi.org/10.1002/adma.201501538.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
15-Jul-2015
DOI:
10.1002/adma.201501538
PubMed ID:
26178685
Type:
Article
ISSN:
0935-9648
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHus, Jui Weien
dc.contributor.authorChen, Chien Chiaen
dc.contributor.authorLee, Ming Juien
dc.contributor.authorLiu, Hsueh Hsingen
dc.contributor.authorChyi, Jen Innen
dc.contributor.authorHuang, Michael R Sen
dc.contributor.authorLiu, Chuan Puen
dc.contributor.authorWei, Tzu Chiaoen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorLai, Kun Yuen
dc.date.accessioned2016-01-19T13:23:42Zen
dc.date.available2016-01-19T13:23:42Zen
dc.date.issued2015-07-15en
dc.identifier.citationHus J-W, Chen C-C, Lee M-J, Liu H-H, Chyi J-I, et al. (2015) Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. Advanced Materials 27: 4845–4850. Available: http://dx.doi.org/10.1002/adma.201501538.en
dc.identifier.issn0935-9648en
dc.identifier.pmid26178685en
dc.identifier.doi10.1002/adma.201501538en
dc.identifier.urihttp://hdl.handle.net/10754/594200en
dc.description.abstractSemipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectGaNen
dc.subjectnano-heteroepitaxyen
dc.subjectquantum wellen
dc.subjectsemipolaren
dc.subjectSi substrateen
dc.titleBottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Sien
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionDepartment of Optics and Photonics; National Central University; Chung-Li 320 Taiwanen
dc.contributor.institutionDepartment of Electrical Engineering; National Central University; Chung-Li 320 Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering; National Cheng Kung University; Tainan 701 Taiwanen
dc.contributor.institutionInstitute of Photonics and Optoelectronics; National Taiwan University; Taipei 106 Taiwanen
kaust.authorHe, Jr-Hauen

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