Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

Handle URI:
http://hdl.handle.net/10754/594198
Title:
Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces
Authors:
Addou, Rafik; McDonnell, Stephen; Barrera, Diego; Guo, Zaibing; Azcatl, Angelica; Wang, Jian; Zhu, Hui; Hinkle, Christopher L.; Quevedo-Lopez, Manuel; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Colombo, Luigi; Hsu, Julia W P; Wallace, Robert M.
Abstract:
Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, et al. (2015) Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces . ACS Nano 9: 9124–9133. Available: http://dx.doi.org/10.1021/acsnano.5b03309.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
22-Sep-2015
DOI:
10.1021/acsnano.5b03309
PubMed ID:
26301428
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
Consejo Nacional de Ciencia y Tecnología[NL-2010-C33-149216]; Division of Electrical, Communications and Cyber Systems[ECCS-1407765]; Semiconductor Research Corporation; Defense Advanced Research Projects Agency; Microelectronics Advanced Research Corporation; Texas Instruments Distinguished Chair in Nanoelectronics, University of Texas at Dallas; Center for Low Energy Systems Technology, University of Notre Dame
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAddou, Rafiken
dc.contributor.authorMcDonnell, Stephenen
dc.contributor.authorBarrera, Diegoen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorAzcatl, Angelicaen
dc.contributor.authorWang, Jianen
dc.contributor.authorZhu, Huien
dc.contributor.authorHinkle, Christopher L.en
dc.contributor.authorQuevedo-Lopez, Manuelen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorColombo, Luigien
dc.contributor.authorHsu, Julia W Pen
dc.contributor.authorWallace, Robert M.en
dc.date.accessioned2016-01-19T13:23:40Zen
dc.date.available2016-01-19T13:23:40Zen
dc.date.issued2015-09-22en
dc.identifier.citationAddou R, McDonnell S, Barrera D, Guo Z, Azcatl A, et al. (2015) Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces . ACS Nano 9: 9124–9133. Available: http://dx.doi.org/10.1021/acsnano.5b03309.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.pmid26301428en
dc.identifier.doi10.1021/acsnano.5b03309en
dc.identifier.urihttp://hdl.handle.net/10754/594198en
dc.description.abstractRoom temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.en
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnología[NL-2010-C33-149216]en
dc.description.sponsorshipDivision of Electrical, Communications and Cyber Systems[ECCS-1407765]en
dc.description.sponsorshipSemiconductor Research Corporationen
dc.description.sponsorshipDefense Advanced Research Projects Agencyen
dc.description.sponsorshipMicroelectronics Advanced Research Corporationen
dc.description.sponsorshipTexas Instruments Distinguished Chair in Nanoelectronics, University of Texas at Dallasen
dc.description.sponsorshipCenter for Low Energy Systems Technology, University of Notre Dameen
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectelectron affinityen
dc.subjectFermi level shiften
dc.subjectimpuritiesen
dc.subjectMoS<inf>2</inf>en
dc.subjectscanning tunneling microscopyen
dc.subjectsurface defectsen
dc.subjectwork functionen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleImpurities and Electronic Property Variations of Natural MoS 2 Crystal Surfacesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalACS Nanoen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, 800 Campbell Road, Richardson, TX, United Statesen
dc.contributor.institutionCentro de Investigación en Materiales Avanzados, S.C. (CIMAV), Unidad Monterrey, Alianza Norte 202, Apodaca, Nuevo León, Mexicoen
dc.contributor.institutionTexas Instruments Incorporated, MS-365, 13121 TI Boulevard, Dallasa, TX, United Statesen
kaust.authorGuo, Zaibingen
kaust.authorAlshareef, Husam N.en

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