Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices

Handle URI:
http://hdl.handle.net/10754/594197
Title:
Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices
Authors:
Kang, Chen Fang; Kuo, Wei Cheng; Bao, Wenzhong; Ho, Chih Hsiang; Huang, Chun Wei; Wu, Wen Wei; Chu, Ying Hao; Juang, Jenh Yih; Tseng, Snow H.; Hu, Liangbing; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Bi, Mn)Ox (BMO) is investigated and several key performance characteristics of Pt/BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. •Self-formed conductive nanofilaments in BMO show ultralow-power memory feature.•The feature of 10nm in diameter and an average 20-30nm spacing of CNFs suggests the compatibility with the current CMOS technologies.•Power dissipation for each CNF is as low as 3.8/20fJ for set/reset process•A realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. © 2015 Elsevier Ltd.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Kang C-F, Kuo W-C, Bao W, Ho C-H, Huang C-W, et al. (2015) Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices. Nano Energy 13: 283–290. Available: http://dx.doi.org/10.1016/j.nanoen.2015.02.033.
Publisher:
Elsevier BV
Journal:
Nano Energy
Issue Date:
Apr-2015
DOI:
10.1016/j.nanoen.2015.02.033
Type:
Article
ISSN:
2211-2855
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKang, Chen Fangen
dc.contributor.authorKuo, Wei Chengen
dc.contributor.authorBao, Wenzhongen
dc.contributor.authorHo, Chih Hsiangen
dc.contributor.authorHuang, Chun Weien
dc.contributor.authorWu, Wen Weien
dc.contributor.authorChu, Ying Haoen
dc.contributor.authorJuang, Jenh Yihen
dc.contributor.authorTseng, Snow H.en
dc.contributor.authorHu, Liangbingen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2016-01-19T13:23:38Zen
dc.date.available2016-01-19T13:23:38Zen
dc.date.issued2015-04en
dc.identifier.citationKang C-F, Kuo W-C, Bao W, Ho C-H, Huang C-W, et al. (2015) Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices. Nano Energy 13: 283–290. Available: http://dx.doi.org/10.1016/j.nanoen.2015.02.033.en
dc.identifier.issn2211-2855en
dc.identifier.doi10.1016/j.nanoen.2015.02.033en
dc.identifier.urihttp://hdl.handle.net/10754/594197en
dc.description.abstractResistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Bi, Mn)Ox (BMO) is investigated and several key performance characteristics of Pt/BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. •Self-formed conductive nanofilaments in BMO show ultralow-power memory feature.•The feature of 10nm in diameter and an average 20-30nm spacing of CNFs suggests the compatibility with the current CMOS technologies.•Power dissipation for each CNF is as low as 3.8/20fJ for set/reset process•A realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. © 2015 Elsevier Ltd.en
dc.publisherElsevier BVen
dc.subjectComplex metal oxideen
dc.subjectMemoryen
dc.subjectNanofilamenten
dc.subjectOperating energyen
dc.subjectUltralow poweren
dc.titleSelf-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devicesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalNano Energyen
dc.contributor.institutionInstitute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan UniversityTaipei, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung UniversityHsinchu, Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Maryland, College ParkMD, United Statesen
dc.contributor.institutionDepartment of Electrical Engineering, Purdue UniversityWest Lafayette, IN, United Statesen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Chiao Tung UniversityHsinchu, Taiwanen
kaust.authorKang, Chenfangen
kaust.authorBao, Wenzhongen
kaust.authorHe, Jr-Hauen
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