GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Handle URI:
http://hdl.handle.net/10754/594178
Title:
GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
Authors:
Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Hsiao Y-H, Tsai M-L, He J-H (2015) GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management. IEEE Trans on Ind Applicat 51: 1277–1283. Available: http://dx.doi.org/10.1109/tia.2014.2360984.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Industry Applications
Issue Date:
Mar-2015
DOI:
10.1109/tia.2014.2360984
Type:
Article
ISSN:
0093-9994; 1939-9367
Sponsors:
This work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHsiao, Yu Hsuanen
dc.contributor.authorTsai, Meng Linen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2016-01-19T13:23:15Zen
dc.date.available2016-01-19T13:23:15Zen
dc.date.issued2015-03en
dc.identifier.citationHsiao Y-H, Tsai M-L, He J-H (2015) GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management. IEEE Trans on Ind Applicat 51: 1277–1283. Available: http://dx.doi.org/10.1109/tia.2014.2360984.en
dc.identifier.issn0093-9994en
dc.identifier.issn1939-9367en
dc.identifier.doi10.1109/tia.2014.2360984en
dc.identifier.urihttp://hdl.handle.net/10754/594178en
dc.description.abstractNanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.en
dc.description.sponsorshipThis work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectGaNen
dc.subjectlight-emitting diode (LED)en
dc.subjectmultiple quantum well (MQW)en
dc.subjectnanostructureen
dc.titleGaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Managementen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Transactions on Industry Applicationsen
dc.contributor.institutionGraduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan UniversityTaipei, Taiwanen
kaust.authorHe, Jr-Hauen
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