Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics

Handle URI:
http://hdl.handle.net/10754/594082
Title:
Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics
Authors:
Yuan, Zhongcheng; Wu, Zhongwei; Bai, Sai; Cui, Wei; Liu, Jie; Song, Tao; Sun, Baoquan
Abstract:
Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.
KAUST Department:
Solar and Photovoltaic Engineering Research Center (SPERC)
Citation:
Yuan Z, Wu Z, Bai S, Cui W, Liu J, et al. (2015) Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics. Organic Electronics 26: 327–333. Available: http://dx.doi.org/10.1016/j.orgel.2015.07.005.
Publisher:
Elsevier BV
Journal:
Organic Electronics
Issue Date:
Nov-2015
DOI:
10.1016/j.orgel.2015.07.005
Type:
Article
ISSN:
1566-1199
Sponsors:
National Natural Science Foundation of China[61176057, 91123005, 61211130358]; National Basic Research Program of China[2012CB932402]
Appears in Collections:
Articles; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorYuan, Zhongchengen
dc.contributor.authorWu, Zhongweien
dc.contributor.authorBai, Saien
dc.contributor.authorCui, Weien
dc.contributor.authorLiu, Jieen
dc.contributor.authorSong, Taoen
dc.contributor.authorSun, Baoquanen
dc.date.accessioned2016-01-19T13:21:10Zen
dc.date.available2016-01-19T13:21:10Zen
dc.date.issued2015-11en
dc.identifier.citationYuan Z, Wu Z, Bai S, Cui W, Liu J, et al. (2015) Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics. Organic Electronics 26: 327–333. Available: http://dx.doi.org/10.1016/j.orgel.2015.07.005.en
dc.identifier.issn1566-1199en
dc.identifier.doi10.1016/j.orgel.2015.07.005en
dc.identifier.urihttp://hdl.handle.net/10754/594082en
dc.description.abstractAbstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.en
dc.description.sponsorshipNational Natural Science Foundation of China[61176057, 91123005, 61211130358]en
dc.description.sponsorshipNational Basic Research Program of China[2012CB932402]en
dc.publisherElsevier BVen
dc.subjectBi<inf>2</inf>Se<inf>3</inf> nanoplatesen
dc.subjectHole transporting layersen
dc.subjectOrganic photovoltaicsen
dc.subjectStabilityen
dc.subjectWork functionen
dc.titleLayered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaicsen
dc.typeArticleen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalOrganic Electronicsen
dc.contributor.institutionJiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, Chinaen
kaust.authorBai, Saien
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