The Silicon:Colloidal Quantum Dot Heterojunction

Handle URI:
http://hdl.handle.net/10754/594072
Title:
The Silicon:Colloidal Quantum Dot Heterojunction
Authors:
Masala, Silvia; Adinolfi, Valerio; Sun, Jon Paul; Del Gobbo, Silvano; Voznyy, Oleksandr; Kramer, Illan J.; Hill, Ian G.; Sargent, Edward H.
Abstract:
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)
Citation:
Masala S, Adinolfi V, Sun J-P, Gobbo SD, Voznyy O, et al. (2015) The Silicon:Colloidal Quantum Dot Heterojunction. Advanced Materials 27: 7445–7450. Available: http://dx.doi.org/10.1002/adma.201503212.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
13-Oct-2015
DOI:
10.1002/adma.201503212
PubMed ID:
26460732
Type:
Article
ISSN:
0935-9648
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorMasala, Silviaen
dc.contributor.authorAdinolfi, Valerioen
dc.contributor.authorSun, Jon Paulen
dc.contributor.authorDel Gobbo, Silvanoen
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorKramer, Illan J.en
dc.contributor.authorHill, Ian G.en
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-01-19T13:20:54Zen
dc.date.available2016-01-19T13:20:54Zen
dc.date.issued2015-10-13en
dc.identifier.citationMasala S, Adinolfi V, Sun J-P, Gobbo SD, Voznyy O, et al. (2015) The Silicon:Colloidal Quantum Dot Heterojunction. Advanced Materials 27: 7445–7450. Available: http://dx.doi.org/10.1002/adma.201503212.en
dc.identifier.issn0935-9648en
dc.identifier.pmid26460732en
dc.identifier.doi10.1002/adma.201503212en
dc.identifier.urihttp://hdl.handle.net/10754/594072en
dc.description.abstractA heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectcolloidal quantum dotsen
dc.subjectheterostructuresen
dc.subjectinfrareden
dc.subjectPbSen
dc.subjectphotodectorsen
dc.titleThe Silicon:Colloidal Quantum Dot Heterojunctionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; University of Toronto; 10 King's College Road Toronto Ontario M5S 3G4 Canadaen
dc.contributor.institutionDepartment of Physics and Atmospheric Science; Dalhousie University; 1459, Oxford Street Halifax Nova Scotia B3H 4R2 Canadaen
kaust.authorMasala, Silviaen
kaust.authorDel Gobbo, Silvanoen

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