Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

Handle URI:
http://hdl.handle.net/10754/594065
Title:
Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates
Authors:
Zheng, Maxwell; Wang, Hsin Ping; Sutter-Fella, Carolin M.; Battaglia, Corsin; Aloni, Shaul; Wang, Xufeng; Moore, James; Beeman, Jeffrey W.; Hettick, Mark; Amani, Matin; Hsu, Wei Tse; Ager, Joel W.; Bermel, Peter; Lundstrom, Mark; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Javey, Ali
Abstract:
The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Zheng M, Wang H-P, Sutter-Fella CM, Battaglia C, Aloni S, et al. (2015) Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates. Adv Energy Mater 5: n/a–n/a. Available: http://dx.doi.org/10.1002/aenm.201501337.
Publisher:
Wiley-Blackwell
Journal:
Advanced Energy Materials
Issue Date:
25-Aug-2015
DOI:
10.1002/aenm.201501337
Type:
Article
ISSN:
1614-6832
Sponsors:
Bay Area Photovoltaics Consortium
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZheng, Maxwellen
dc.contributor.authorWang, Hsin Pingen
dc.contributor.authorSutter-Fella, Carolin M.en
dc.contributor.authorBattaglia, Corsinen
dc.contributor.authorAloni, Shaulen
dc.contributor.authorWang, Xufengen
dc.contributor.authorMoore, Jamesen
dc.contributor.authorBeeman, Jeffrey W.en
dc.contributor.authorHettick, Marken
dc.contributor.authorAmani, Matinen
dc.contributor.authorHsu, Wei Tseen
dc.contributor.authorAger, Joel W.en
dc.contributor.authorBermel, Peteren
dc.contributor.authorLundstrom, Marken
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorJavey, Alien
dc.date.accessioned2016-01-19T13:20:42Zen
dc.date.available2016-01-19T13:20:42Zen
dc.date.issued2015-08-25en
dc.identifier.citationZheng M, Wang H-P, Sutter-Fella CM, Battaglia C, Aloni S, et al. (2015) Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates. Adv Energy Mater 5: n/a–n/a. Available: http://dx.doi.org/10.1002/aenm.201501337.en
dc.identifier.issn1614-6832en
dc.identifier.doi10.1002/aenm.201501337en
dc.identifier.urihttp://hdl.handle.net/10754/594065en
dc.description.abstractThe design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.en
dc.description.sponsorshipBay Area Photovoltaics Consortiumen
dc.publisherWiley-Blackwellen
dc.subjectIII-V semiconductorsen
dc.subjectInPen
dc.subjectmaterials growthen
dc.subjectphotovoltaic devicesen
dc.subjectthin-filmsen
dc.titleThin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substratesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalAdvanced Energy Materialsen
dc.contributor.institutionElectrical Engineering and Computer Sciences Department; University of California; Berkeley CA 94720 USAen
dc.contributor.institutionMaterials Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USAen
dc.contributor.institutionMolecular Foundry; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USAen
dc.contributor.institutionSchool of Electrical and Computer Engineering; Purdue University; West Lafayette IN 47907 USAen
kaust.authorHe, Jr-Hauen
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