Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Handle URI:
http://hdl.handle.net/10754/592636
Title:
Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
Authors:
Li, Xiaohang ( 0000-0002-4434-365X ) ; Xie, Hongen; Ponce, Fernando A. ( 0000-0002-1275-9386 ) ; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. ( 0000-0003-4691-1208 )
Abstract:
We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells 2015, 107 (24):241109 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
14-Dec-2015
DOI:
10.1063/1.4938136
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/24/10.1063/1.4938136
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorXie, Hongenen
dc.contributor.authorPonce, Fernando A.en
dc.contributor.authorRyou, Jae-Hyunen
dc.contributor.authorDetchprohm, Theeradetchen
dc.contributor.authorDupuis, Russell D.en
dc.date.accessioned2015-12-28T14:49:06Zen
dc.date.available2015-12-28T14:49:06Zen
dc.date.issued2015-12-14en
dc.identifier.citationOnset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells 2015, 107 (24):241109 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4938136en
dc.identifier.urihttp://hdl.handle.net/10754/592636en
dc.description.abstractWe demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/24/10.1063/1.4938136en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleOnset of surface stimulated emission at 260 nm from AlGaN multiple quantum wellsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAen
dc.contributor.institutionDepartment of Physics, Arizona State University, Tempe, Arizona 85287, USAen
dc.contributor.institutionDepartment of Physics, Arizona State University, Tempe, Arizona 85287, USAen
dc.contributor.institutionDepartment of Mechanical Engineering, Materials Science and Engineering Program, and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, USAen
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAen
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Xiaohangen
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