High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

Handle URI:
http://hdl.handle.net/10754/592622
Title:
High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi
Authors:
Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi 2015, 92 (23) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
18-Dec-2015
DOI:
10.1103/PhysRevB.92.235134
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.92.235134
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHou, Zhipengen
dc.contributor.authorWang, Wenhongen
dc.contributor.authorXu, Guizhouen
dc.contributor.authorZhang, Xiaomingen
dc.contributor.authorWei, Zhiyangen
dc.contributor.authorShen, Shipengen
dc.contributor.authorLiu, Enkeen
dc.contributor.authorYao, Yuanen
dc.contributor.authorChai, Yishengen
dc.contributor.authorSun, Youngen
dc.contributor.authorXi, Xuekuien
dc.contributor.authorWang, Wenquanen
dc.contributor.authorLiu, Zhongyuanen
dc.contributor.authorWu, Guanghengen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-12-28T14:52:54Zen
dc.date.available2015-12-28T14:52:54Zen
dc.date.issued2015-12-18en
dc.identifier.citationHigh electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi 2015, 92 (23) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.92.235134en
dc.identifier.urihttp://hdl.handle.net/10754/592622en
dc.description.abstractMaterials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.92.235134en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleHigh electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBien
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionState Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, Chinaen
dc.contributor.institutionCollege of Physics, Jilin University, Changchun 130023, Chinaen
dc.contributor.institutionState Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004, Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhang, Xixiangen
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