Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

Handle URI:
http://hdl.handle.net/10754/592610
Title:
Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters
Authors:
Tsai, Meng-Lin; Tu, Wei-Chen; Tang, Libin; Wei, Tzu-Chiao; Wei, Wan-Rou; Lau, Shu Ping; Chen, Lih-Juann; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters 2015 Nano Letters
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
16-Dec-2015
DOI:
10.1021/acs.nanolett.5b03814
Type:
Article
ISSN:
1530-6984; 1530-6992
Additional Links:
http://pubs.acs.org/doi/10.1021/acs.nanolett.5b03814
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTsai, Meng-Linen
dc.contributor.authorTu, Wei-Chenen
dc.contributor.authorTang, Libinen
dc.contributor.authorWei, Tzu-Chiaoen
dc.contributor.authorWei, Wan-Rouen
dc.contributor.authorLau, Shu Pingen
dc.contributor.authorChen, Lih-Juannen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-12-27T13:35:23Zen
dc.date.available2015-12-27T13:35:23Zen
dc.date.issued2015-12-16en
dc.identifier.citationEfficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters 2015 Nano Lettersen
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.5b03814en
dc.identifier.urihttp://hdl.handle.net/10754/592610en
dc.description.abstractBy employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acs.nanolett.5b03814en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.5b03814.en
dc.titleEfficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconvertersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalNano Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROCen
dc.contributor.institutionDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SARen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorTsai, Meng-Linen
kaust.authorTu, Wei-Chenen
kaust.authorWei, Tzu-Chiaoen
kaust.authorWei, Wan-Rouen
kaust.authorHe, Jr-Hauen
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