Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Handle URI:
http://hdl.handle.net/10754/592601
Title:
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
Authors:
Wang, Ping; Yuan, Ying; Zhao, Chao ( 0000-0002-9582-1068 ) ; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xue-Lin; Xu, Fu-Jun; Qin, Zhixin; Li, Xin-Zheng; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Shen, Bo
Abstract:
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires 2015 Nano Letters
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
22-Dec-2015
DOI:
10.1021/acs.nanolett.5b04726
Type:
Article
ISSN:
1530-6984; 1530-6992
Additional Links:
http://pubs.acs.org/doi/10.1021/acs.nanolett.5b04726
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Pingen
dc.contributor.authorYuan, Yingen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorWang, Xinqiangen
dc.contributor.authorZheng, Xiantongen
dc.contributor.authorRong, Xinen
dc.contributor.authorWang, Taoen
dc.contributor.authorSheng, Bowenen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorZhang, Yongqiangen
dc.contributor.authorBian, Lifengen
dc.contributor.authorYang, Xue-Linen
dc.contributor.authorXu, Fu-Junen
dc.contributor.authorQin, Zhixinen
dc.contributor.authorLi, Xin-Zhengen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorShen, Boen
dc.date.accessioned2015-12-27T13:20:51Zen
dc.date.available2015-12-27T13:20:51Zen
dc.date.issued2015-12-22en
dc.identifier.citationLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires 2015 Nano Lettersen
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.5b04726en
dc.identifier.urihttp://hdl.handle.net/10754/592601en
dc.description.abstractLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acs.nanolett.5b04726en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.5b04726.en
dc.titleLattice-polarity-driven epitaxy of hexagonal semiconductor nanowiresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionState Key Laboratory of Artificial Microstructure a nd Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. Chinaen
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. Chinaen
dc.contributor.institutionSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, P. R. Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhao, Chaoen
kaust.authorWang, Qingxiaoen
kaust.authorZhang, Xixiangen
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