Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

Handle URI:
http://hdl.handle.net/10754/584254
Title:
Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films
Authors:
Porte, Yoann; Maller, Robert; Faber, Hendrik; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Anthopoulos, Thomas D; McLachlan, Martyn
Abstract:
By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.
KAUST Department:
Materials Science and Engineering Program
Citation:
Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films 2015 J. Mater. Chem. C
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
15-Dec-2015
DOI:
10.1039/C5TC03520A
Type:
Article
ISSN:
2050-7526; 2050-7534
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC03520A
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorPorte, Yoannen
dc.contributor.authorMaller, Roberten
dc.contributor.authorFaber, Hendriken
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorAnthopoulos, Thomas Den
dc.contributor.authorMcLachlan, Martynen
dc.date.accessioned2015-12-21T08:28:58Zen
dc.date.available2015-12-21T08:28:58Zen
dc.date.issued2015-12-15en
dc.identifier.citationExploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films 2015 J. Mater. Chem. Cen
dc.identifier.issn2050-7526en
dc.identifier.issn2050-7534en
dc.identifier.doi10.1039/C5TC03520Aen
dc.identifier.urihttp://hdl.handle.net/10754/584254en
dc.description.abstractBy investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC03520Aen
dc.rightsArchived with thanks to J. Mater. Chem. Cen
dc.titleExploring and Controlling Intrinsic Defect Formation in SnO2 Thin Filmsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalJ. Mater. Chem. Cen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlshareef, Husam N.en
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