Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

Handle URI:
http://hdl.handle.net/10754/583288
Title:
Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
Authors:
Shen, Chao; Leonard, John; Pourhashemi, Arash; Oubei, Hassan M. ( 0000-0001-6440-2488 ) ; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.
KAUST Department:
Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE Photonics Conference (IPC)
Conference/Event name:
Photonics Conference (IPC), 2015
Issue Date:
4-Oct-2015
DOI:
10.1109/IPCon.2015.7323637
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7323637
Appears in Collections:
Conference Papers; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorLeonard, Johnen
dc.contributor.authorPourhashemi, Arashen
dc.contributor.authorOubei, Hassan M.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorSpeck, James S.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEldesouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-12-07T09:45:52Zen
dc.date.available2015-12-07T09:45:52Zen
dc.date.issued2015-10-04en
dc.identifier.doi10.1109/IPCon.2015.7323637en
dc.identifier.urihttp://hdl.handle.net/10754/583288en
dc.description.abstractIn summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7323637en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.titleLow modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrateen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2015 IEEE Photonics Conference (IPC)en
dc.conference.date4-8 Oct. 2015en
dc.conference.namePhotonics Conference (IPC), 2015en
dc.conference.locationReston, VA, USAen
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAen
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorOubei, Hassan M.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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