Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

Handle URI:
http://hdl.handle.net/10754/583279
Title:
Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Omran, Hesham ( 0000-0002-0117-7364 ) ; Alshareef, Sarah; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensors Lab; Integrated Nanotechnology Lab; Integrated Disruptive Electronic Applications (IDEA) Lab
Citation:
Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits 2015:1 IEEE Electron Device Letters
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Electron Device Letters
Issue Date:
4-Dec-2015
DOI:
10.1109/LED.2015.2505613
Type:
Article
ISSN:
0741-3106; 1558-0563
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7347334
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorOmran, Heshamen
dc.contributor.authorAlshareef, Sarahen
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-12-06T12:47:24Zen
dc.date.available2015-12-06T12:47:24Zen
dc.date.issued2015-12-04en
dc.identifier.citationAmorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits 2015:1 IEEE Electron Device Lettersen
dc.identifier.issn0741-3106en
dc.identifier.issn1558-0563en
dc.identifier.doi10.1109/LED.2015.2505613en
dc.identifier.urihttp://hdl.handle.net/10754/583279en
dc.description.abstractHigh performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7347334en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectDigital Circuitsen
dc.subjectNANDen
dc.subjectThin Film Transistoren
dc.subjectWavy channelen
dc.subjectZin Oxideen
dc.titleAmorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuitsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.identifier.journalIEEE Electron Device Lettersen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHanna, Amiren
kaust.authorHussain, Aftab M.en
kaust.authorOmran, Heshamen
kaust.authorAlshareef, Sarahen
kaust.authorSalama, Khaled N.en
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.