III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Handle URI:
http://hdl.handle.net/10754/583075
Title:
III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon
Authors:
Hazari, Arnab ( 0000-0001-8025-7284 ) ; Aiello, Anthony; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Bhattacharya, Pallab
Abstract:
III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon 2015, 107 (19):191107 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
12-Nov-2015
DOI:
10.1063/1.4935614
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/19/10.1063/1.4935614
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHazari, Arnaben
dc.contributor.authorAiello, Anthonyen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2015-12-01T13:45:22Zen
dc.date.available2015-12-01T13:45:22Zen
dc.date.issued2015-11-12en
dc.identifier.citationIII-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon 2015, 107 (19):191107 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4935614en
dc.identifier.urihttp://hdl.handle.net/10754/583075en
dc.description.abstractIII-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/19/10.1063/1.4935614en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleIII-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)siliconen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
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