Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

Handle URI:
http://hdl.handle.net/10754/582486
Title:
Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform
Authors:
Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Aljedaani, Abdulrahman B.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; High-Speed Fluids Imaging Laboratory; Physical Sciences and Engineering (PSE) Division
Citation:
Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform 2015, 107 (17):174101 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
26-Oct-2015
DOI:
10.1063/1.4934355
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/17/10.1063/1.4934355
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorTorres Sevilla, Galo A.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorAljedaani, Abdulrahman B.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-11-22T12:11:21Zen
dc.date.available2015-11-22T12:11:21Zen
dc.date.issued2015-10-26en
dc.identifier.citationFunctional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform 2015, 107 (17):174101 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4934355en
dc.identifier.urihttp://hdl.handle.net/10754/582486en
dc.description.abstractFlexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/17/10.1063/1.4934355en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleFunctional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platformen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentHigh-Speed Fluids Imaging Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
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