Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Handle URI:
http://hdl.handle.net/10754/582479
Title:
Electroforming free resistive switching memory in two-dimensional VOx nanosheets
Authors:
Hota, Mrinal Kanti ( 0000-0003-4336-8051 ) ; Nagaraju, Doddahalli H.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.
KAUST Department:
Materials Science and Engineering Program
Citation:
Electroforming free resistive switching memory in two-dimensional VOx nanosheets 2015, 107 (16):163106 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
21-Oct-2015
DOI:
10.1063/1.4933335
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/16/10.1063/1.4933335
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorHota, Mrinal Kantien
dc.contributor.authorNagaraju, Doddahalli H.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-11-22T07:09:08Zen
dc.date.available2015-11-22T07:09:08Zen
dc.date.issued2015-10-21en
dc.identifier.citationElectroforming free resistive switching memory in two-dimensional VOx nanosheets 2015, 107 (16):163106 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4933335en
dc.identifier.urihttp://hdl.handle.net/10754/582479en
dc.description.abstractWe report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/16/10.1063/1.4933335en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleElectroforming free resistive switching memory in two-dimensional VOx nanosheetsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHota, M. K.en
kaust.authorNagaraju, Doddahalli H.en
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
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