Out-of-plane strain effect on silicon-based flexible FinFETs

Handle URI:
http://hdl.handle.net/10754/581769
Title:
Out-of-plane strain effect on silicon-based flexible FinFETs
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Fahad, Hossain M.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
KAUST Department:
Integrated Nanotechnology Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 73rd Annual Device Research Conference (DRC)
Conference/Event name:
2015 73rd Annual Device Research Conference (DRC)
Issue Date:
21-Jun-2015
DOI:
10.1109/DRC.2015.7175572
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7175572
Appears in Collections:
Conference Papers; Integrated Nanotechnology Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-11-05T06:29:04Zen
dc.date.available2015-11-05T06:29:04Zen
dc.date.issued2015-06-21en
dc.identifier.doi10.1109/DRC.2015.7175572en
dc.identifier.urihttp://hdl.handle.net/10754/581769en
dc.description.abstractSummary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7175572en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.titleOut-of-plane strain effect on silicon-based flexible FinFETsen
dc.typeConference Paperen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journal2015 73rd Annual Device Research Conference (DRC)en
dc.conference.date21-24 June 2015en
dc.conference.name2015 73rd Annual Device Research Conference (DRC)en
dc.conference.locationColumbus, OHen
dc.eprint.versionPost-printen
kaust.authorGhoneim, Mohamed T.en
kaust.authorAlfaraj, Nasiren
kaust.authorSevilla, Galo T.en
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.