Surface-Controlled Metal Oxide Resistive Memory

Handle URI:
http://hdl.handle.net/10754/581765
Title:
Surface-Controlled Metal Oxide Resistive Memory
Authors:
Ke, Jr-Jian; Namura, Kyoko; Duran Retamal, Jose Ramon; Ho, Chin-Hsiang; Minamitake, Haruhiko; Wei, Tzu-Chiao; Tsai, Dung-Sheng; Lin, Chun-Ho; Suzuki, Motofumi; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Surface-Controlled Metal Oxide Resistive Memory 2015:1 IEEE Electron Device Letters
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Electron Device Letters
Issue Date:
28-Oct-2015
DOI:
10.1109/LED.2015.2493343
Type:
Article
ISSN:
0741-3106; 1558-0563
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7310859
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKe, Jr-Jianen
dc.contributor.authorNamura, Kyokoen
dc.contributor.authorDuran Retamal, Jose Ramonen
dc.contributor.authorHo, Chin-Hsiangen
dc.contributor.authorMinamitake, Haruhikoen
dc.contributor.authorWei, Tzu-Chiaoen
dc.contributor.authorTsai, Dung-Shengen
dc.contributor.authorLin, Chun-Hoen
dc.contributor.authorSuzuki, Motofumien
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-11-05T06:11:23Zen
dc.date.available2015-11-05T06:11:23Zen
dc.date.issued2015-10-28en
dc.identifier.citationSurface-Controlled Metal Oxide Resistive Memory 2015:1 IEEE Electron Device Lettersen
dc.identifier.issn0741-3106en
dc.identifier.issn1558-0563en
dc.identifier.doi10.1109/LED.2015.2493343en
dc.identifier.urihttp://hdl.handle.net/10754/581765en
dc.description.abstractTo explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7310859en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.titleSurface-Controlled Metal Oxide Resistive Memoryen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Electron Device Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Electrical Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Micro Engineering, Kyoto University, Kyoto 606-8501, Japanen
dc.contributor.institutionElectrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKe, Jr-Jianen
kaust.authorDuran Retamal, Jose Ramonen
kaust.authorWei, Tzu-Chiaoen
kaust.authorLin, Chun-Hoen
kaust.authorHe, Jr-Hauen
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