A Fully Transparent Resistive Memory for Harsh Environments

Handle URI:
http://hdl.handle.net/10754/581360
Title:
A Fully Transparent Resistive Memory for Harsh Environments
Authors:
Yang, Po-Kang; Ho, Chih-Hsiang; Lien, Der-Hsien; Duran Retamal, Jose Ramon; Kang, Chen-Fang; Chen, Kuan-Ming; Huang, Teng-Han; Yu, Yueh-Chung; Wu, Chih-I; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
A Fully Transparent Resistive Memory for Harsh Environments 2015, 5:15087 Scientific Reports
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
12-Oct-2015
DOI:
10.1038/srep15087
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/articles/srep15087
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorYang, Po-Kangen
dc.contributor.authorHo, Chih-Hsiangen
dc.contributor.authorLien, Der-Hsienen
dc.contributor.authorDuran Retamal, Jose Ramonen
dc.contributor.authorKang, Chen-Fangen
dc.contributor.authorChen, Kuan-Mingen
dc.contributor.authorHuang, Teng-Hanen
dc.contributor.authorYu, Yueh-Chungen
dc.contributor.authorWu, Chih-Ien
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-10-28T13:43:25Zen
dc.date.available2015-10-28T13:43:25Zen
dc.date.issued2015-10-12en
dc.identifier.citationA Fully Transparent Resistive Memory for Harsh Environments 2015, 5:15087 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep15087en
dc.identifier.urihttp://hdl.handle.net/10754/581360en
dc.description.abstractA fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/articles/srep15087en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleA Fully Transparent Resistive Memory for Harsh Environmentsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USAen
dc.contributor.institutionInstitute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROCen
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 11529, Taiwan, ROCen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorYang, Po Kangen
kaust.authorLien, Der Hsienen
kaust.authorDuran Retamal, Jose Ramonen
kaust.authorKang, Chen Fangen
kaust.authorHe, Jr-Hauen
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