InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

Handle URI:
http://hdl.handle.net/10754/579910
Title:
InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants
Authors:
Alhashim, Hala H. ( 0000-0002-8779-1743 ) ; Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Majid, Mohammed A.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175  nm (>148  meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060−1200  nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green–yellow–orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants 2015, 54 (10):107107 Optical Engineering
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Optical Engineering
Issue Date:
16-Oct-2015
DOI:
10.1117/1.OE.54.10.107107
Type:
Article
ISSN:
0091-3286
Additional Links:
http://opticalengineering.spiedigitallibrary.org/article.aspx?doi=10.1117/1.OE.54.10.107107
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlhashim, Hala H.en
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorMajid, Mohammed A.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-10-20T09:44:44Zen
dc.date.available2015-10-20T09:44:44Zen
dc.date.issued2015-10-16en
dc.identifier.citationInAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants 2015, 54 (10):107107 Optical Engineeringen
dc.identifier.issn0091-3286en
dc.identifier.doi10.1117/1.OE.54.10.107107en
dc.identifier.urihttp://hdl.handle.net/10754/579910en
dc.description.abstractWe report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175  nm (>148  meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060−1200  nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green–yellow–orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.en
dc.language.isoenen
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://opticalengineering.spiedigitallibrary.org/article.aspx?doi=10.1117/1.OE.54.10.107107en
dc.rightsPublished by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.en
dc.titleInAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulantsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOptical Engineeringen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlhashim, Hala H.en
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorMajid, Mohammed A.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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