Oxygen defect processes in silicon and silicon germanium

Handle URI:
http://hdl.handle.net/10754/579841
Title:
Oxygen defect processes in silicon and silicon germanium
Authors:
Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Oxygen defect processes in silicon and silicon germanium 2015, 2 (2):021306 Applied Physics Reviews
Publisher:
AIP Publishing
Journal:
Applied Physics Reviews
Issue Date:
18-Jun-2015
DOI:
10.1063/1.4922251
Type:
Article
ISSN:
1931-9401
Additional Links:
http://scitation.aip.org/content/aip/journal/apr2/2/2/10.1063/1.4922251
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChroneos, A.en
dc.contributor.authorSgourou, E. N.en
dc.contributor.authorLondos, C. A.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-10-18T14:38:28Zen
dc.date.available2015-10-18T14:38:28Zen
dc.date.issued2015-06-18en
dc.identifier.citationOxygen defect processes in silicon and silicon germanium 2015, 2 (2):021306 Applied Physics Reviewsen
dc.identifier.issn1931-9401en
dc.identifier.doi10.1063/1.4922251en
dc.identifier.urihttp://hdl.handle.net/10754/579841en
dc.description.abstractSilicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apr2/2/2/10.1063/1.4922251en
dc.rightsArchived with thanks to Applied Physics Reviewsen
dc.titleOxygen defect processes in silicon and silicon germaniumen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Reviewsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionFaculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB, United Kingdomen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionSolid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens, Greeceen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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