Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

Handle URI:
http://hdl.handle.net/10754/578842
Title:
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
Authors:
Moody, Galan; Kavir Dass, Chandriker; Hao, Kai; Chen, Chang-Hsiao; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Singh, Akshay; Tran, Kha; Clark, Genevieve; Xu, Xiaodong; Berghäuser, Gunnar; Malic, Ermin; Knorr, Andreas; Li, Xiaoqin
Abstract:
The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe2). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides 2015, 6:8315 Nature Communications
Publisher:
Nature Publishing Group
Journal:
Nature Communications
Issue Date:
18-Sep-2015
DOI:
10.1038/ncomms9315
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms9315
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMoody, Galanen
dc.contributor.authorKavir Dass, Chandrikeren
dc.contributor.authorHao, Kaien
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorSingh, Akshayen
dc.contributor.authorTran, Khaen
dc.contributor.authorClark, Genevieveen
dc.contributor.authorXu, Xiaodongen
dc.contributor.authorBerghäuser, Gunnaren
dc.contributor.authorMalic, Erminen
dc.contributor.authorKnorr, Andreasen
dc.contributor.authorLi, Xiaoqinen
dc.date.accessioned2015-09-29T05:17:47Zen
dc.date.available2015-09-29T05:17:47Zen
dc.date.issued2015-09-18en
dc.identifier.citationIntrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides 2015, 6:8315 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/ncomms9315en
dc.identifier.urihttp://hdl.handle.net/10754/578842en
dc.description.abstractThe band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe2). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms9315en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectPhysical sciencesen
dc.subjectMaterials scienceen
dc.subjectNanotechnologyen
dc.subjectCondensed matteren
dc.titleIntrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, USAen
dc.contributor.institutionDepartment of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwanen
dc.contributor.institutionDepartment of Physics, University of Washington, Seattle, Washington 98195, USAen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USAen
dc.contributor.institutionInstitut f. Theoretische Physik, Nitchlineare Optik und Quantenelektronik, Technische Universität Berlin, 10623 Berlin, Germanyen
dc.contributor.institutionDepartment of Applied Physics, Chalmers University of Technology, Gothenburg, Swedenen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
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