Magnetoresistance of cylindrical nanowires with artificial pinning site

Handle URI:
http://hdl.handle.net/10754/577120
Title:
Magnetoresistance of cylindrical nanowires with artificial pinning site
Authors:
Vidal, Enrique Vilanova; Mohammed, H.; Ivanov, I.; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE Magnetics Conference (INTERMAG)
Issue Date:
May-2015
DOI:
10.1109/INTMAG.2015.7157068
Type:
Conference Paper
Appears in Collections:
Conference Papers; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorVidal, Enrique Vilanovaen
dc.contributor.authorMohammed, H.en
dc.contributor.authorIvanov, I.en
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-09-10T14:19:05Zen
dc.date.available2015-09-10T14:19:05Zen
dc.date.issued2015-05en
dc.identifier.doi10.1109/INTMAG.2015.7157068en
dc.identifier.urihttp://hdl.handle.net/10754/577120en
dc.description.abstractNew concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleMagnetoresistance of cylindrical nanowires with artificial pinning siteen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journal2015 IEEE Magnetics Conference (INTERMAG)en
kaust.authorVidal, Enrique Vilanovaen
kaust.authorKosel, Jürgenen
kaust.authorMohammed, H.en
kaust.authorIvanov, I.en
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