Large-area WSe2 electric double layer transistors on a plastic substrate

Handle URI:
http://hdl.handle.net/10754/577116
Title:
Large-area WSe2 electric double layer transistors on a plastic substrate
Authors:
Funahashi, Kazuma; Pu, Jiang; Li, Ming Yang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Iwasa, Yoshihiro; Takenobu, Taishi
Abstract:
Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Publisher:
Japan Society of Applied Physics
Journal:
Japanese Journal of Applied Physics
Issue Date:
27-Apr-2015
DOI:
10.7567/JJAP.54.06FF06
Type:
Article
ISSN:
00214922
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorFunahashi, Kazumaen
dc.contributor.authorPu, Jiangen
dc.contributor.authorLi, Ming Yangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorIwasa, Yoshihiroen
dc.contributor.authorTakenobu, Taishien
dc.date.accessioned2015-09-10T14:18:55Zen
dc.date.available2015-09-10T14:18:55Zen
dc.date.issued2015-04-27en
dc.identifier.issn00214922en
dc.identifier.doi10.7567/JJAP.54.06FF06en
dc.identifier.urihttp://hdl.handle.net/10754/577116en
dc.description.abstractDue to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.en
dc.publisherJapan Society of Applied Physicsen
dc.titleLarge-area WSe2 electric double layer transistors on a plastic substrateen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalJapanese Journal of Applied Physicsen
dc.contributor.institutionDepartment of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, Japanen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwanen
dc.contributor.institutionDepartment of Applied Physics, University of Tokyo, Bunkyo, Tokyo, Japanen
dc.contributor.institutionRIKEN, Center for Emergent Matter Science (CEMS), Wako, Saitama, Japanen
dc.contributor.institutionDepartment of Applied Physics, Waseda University, Shinjuku, Tokyo, Japanen
dc.contributor.institutionKagami Memorial Laboratory, Waseda University, Shinjuku, Tokyo, Japanen
kaust.authorLi, Lain-Jongen
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